Hynix發佈世界首款1GB Mobile LP DDR2顆粒 ，僅需1.2V

Seoul, April 6, 2008 - Hynix Semiconductor Inc., (‘Hynix’ or ‘the Company’, www.hynix.com) today introduced the world’s first and fastest 1 Gigabit mobile LPDDR2. This product meets JEDEC standard and is expected to lead international LPDDR2 standard.

1Gb LPDDR, Low Power DDR2, is built on the Company’s leading edge 66nm process technology. It boasts maximum operating speed of 800Mbps at 1.2V power supply. It consumes less power but operates at a faster speed than mobile DDR. With the fastest speed and small form factor package of 9mm x 12mm,, it is designed to meet the needs of a wide range of mobile applications which demand high memory density and fast operating speed features.

This new product has function of Hynix’s ‘One Chip Solutions’ and it allows Hynix the flexibility of offering wire bonded options to meet the specific needs of the customer by combining SDRAM/DDR DRAM interfaces, and x16/x32 organizations on a single chip.

Hynix plans to start mass production of LPDDR2 in the fourth quarter of this year to meet the increasing demand for high performance mobile applications.

About Hynix Semiconductor Inc.

Hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about Hynix is available at www.hynix.com.

使用66nm製程設計 ，僅需1.2V即可達到800Mhz的速度 ，預計今年第四季開始限量生產

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